Defect concentration measurements in solids using a lyoluminescence methodAVOTINSH, YU. E; DZELME, YU. R; TILIKS, YU. YE et al.The International journal of applied radiation and isotopes. 1985, Vol 36, Num 10, pp 789-791, issn 0020-708XArticle

The effects of wafer to wafer defect density variations on integrated circuit defect and fault distributionsSTAPPER, C. H.IBM journal of research and development. 1985, Vol 29, Num 1, pp 87-97, issn 0018-8646Article

Calcul des capacités calorifiques de l'argon cristallin par la méthode de la dynamique moléculaire dans l'ensemble N, P, TASHUROV, A. K; ADKHAMOV, A. A.Žurnal fizičeskoj himii. 1985, Vol 59, Num 5, pp 1286-1287, issn 0044-4537Article

Etude du frottement interne de l'antimoniure d'indium contenant des densités variables de défautsMAKSIMYUK, P.A; FOMIN, A.V; GLEJ, V.A et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 292-294, issn 0367-3294Article

On a connection between vacancy formation parameters and melting process in rare gas solidsLAZARIDOU, M; EFTAXIAS, K.Physica status solidi. A. Applied research. 1985, Vol 90, Num 2, pp K147-K149, issn 0031-8965Article

Etude de la perfection cristalline des cristaux avec une distribution de défautsVORONKOV, S. N; CHUKHOVSKIJ, F. N; PISKUNOV, D. I et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1911-1912, issn 0367-3294Article

DEFECT ANALYSIS AND YIELD DEGRADATION OF INTEGRATED CIRCUITS.ANIL GUPTA; PORTER WA; LATHROP JW et al.1974; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 3; PP. 96-103; BIBL. 28 REF.Article

Amorphization and regrowth in Si/CoSi₂/Si heterostructuresMAEX, K; WHITE, A. E; SHORT, K. T et al.Journal of applied physics. 1990, Vol 68, Num 11, pp 5641-5647, issn 0021-8979Article

Auto-oscillations de la température et de la densité des défauts dans des lames minces sous irradiationSELISHCHEV, P. A; SUGAKOV, V. I.Fizika tverdogo tela. 1988, Vol 30, Num 9, pp 2611-2615, issn 0367-3294Article

Connection between the formation volume and formation Gibbs energy in noble-gas solidsVAROTSOS, P; ALEXOPOULOS, K.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7305-7306, issn 0163-1829Article

RELATION ENTRE LA FORMATION DES DEFAUTS D'IRRADIATION ET L'INTENSITE DE L'IRRADIATION ET LA LOI DE RELAXATION TEMPORELLE DE LA CONCENTRATION DES DEFAUTS DANS LA TRACE DE LA PARTICULEVAJSBURD DI; KUZNETSOV VP.1974; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1974; NO 5; PP. 159-160; RESUME DE L'ART. NO 7212 DEPOSE AU VINITIArticle

Photo-induced defects and photoconductivity in amorphous siliconOKAMOTO, H; KIDA, H; HAMAKAWA, Y et al.Solid state communications. 1984, Vol 49, Num 7, pp 731-733, issn 0038-1098Article

A disorder model of melting. II: Alkali halidesVAID, B. A; SHARMA, K. C; SYAL, V. K et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 59-62, issn 0370-1972Article

Crystalline properties of multiple BP-Si layers grown on silicon substrateSUGIURA, S; YOSHIDA, T; KANEKO, Y et al.Journal of electronic materials. 1984, Vol 13, Num 6, pp 949-954, issn 0361-5235Article

APPLICATION DES METHODES CINETIQUES A L'ETUDE DE LA CONCENTRATION DES DEFAUTS ET DE LEUR MOBILITE DANS LES OXYDES DE METAUX DE TRANSITIONMROVEC S.1975; ARCH. HUTN.; POLSKA; DA. 1975; VOL. 20; NO 2; PP. 289-317; ABS. ANGL.; BIBL. 1 P. 1/2Article

APPLYING A COMPOSITE MODEL TO THE IC YIELD PROBLEM.WARNER RM JR.1974; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 3; PP. 86-95; BIBL. 14 REF.Article

EMPIRICAL DETERMINATION OF THE RANDOM FRACTION IN DISORDERED CHANNEL.MATSUNAMI N; ITOH N.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 3; PP. 173-176; BIBL. 15 REF.Article

Vacancy contents in MnZn ferrites from TG curvesAYALA, O. E; LARDIZABAL, D; REYES, A et al.Journal of thermal analysis and calorimetry. 2000, Vol 59, Num 3, pp 943-949, issn 1388-6150Conference Paper

A Debye model for point defects in aluminosilicate crystalsBROVETTO, P; MAXIA, V; SALIS, M et al.Il Nuovo cimento. D. 1993, Vol 15, Num 10, pp 1331-1343, issn 0392-6737Article

Vacancy formation in gold and aluminumWASZ, M. L; MCLELLAN, R. B.Physica status solidi. B. Basic research. 1992, Vol 170, Num 2, pp K71-K76, issn 0370-1972Article

Variation des caractéristiques élastiques et inélastiques des cristaux d'antimoniure d'indium recuitsMAKSIMYUK, P. A; FOMIN, A. V; GLEJ, V. A et al.Fizika tverdogo tela. 1988, Vol 30, Num 9, pp 2868-2869, issn 0367-3294Article

Inhomogeneity of the deep center EL2 in GaAs observed by direct infra-red imagingSKOLNICK, M. S; BROZEL, M. R; REED, L. J et al.Journal of electronic materials. 1984, Vol 13, Num 1, pp 107-125, issn 0361-5235Article

The coexistence of unstable, metastable, and separated Frenkel pair defects in solids. I: Basic characteristicsDZHUMANOV, S; KHABIBULLAEV, P. K.Physica status solidi. B. Basic research. 1984, Vol 122, Num 2, pp 481-488, issn 0370-1972Article

Determination of defects in SiO₂ grown on Si(100)STOEV, I; KOPRINAROVA, Y; KOSSEVA, I et al.Thin solid films. 1983, Vol 105, Num 1, pp 61-69, issn 0040-6090Article

Influence of the variation of the association energy on the equilibrium concentration of dipole aggregates in ionic crystalsBERG, G; PIPPEL, A; FRÖHLICH, F et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 1, pp 77-83, issn 0031-8965Article